[H-8-3] Silicon Radio Frequency Single-electron Transistors Operating at above 4.2 K

M. Manoharan¹、Y. Tsuchiya^1,2,3、S. Oda^1,3、H. Mizuta^1,2,3 (1.Tokyo Tech., Japan、2.Univ. of Southampton, UK、3.SORST-JST, Japan)

https://doi.org/10.7567/SSDM.2008.H-8-3