[I-10-6] Carrier Injection and Accumulation of Pentacene Field Effect Transistor with P(VDF-TeFE) Gate Insulator

R. Tamura¹、S. Yoshita¹、E. Lim¹、T. Manaka¹、M. Iwamoto¹ (1.Tokyo Tech., Japan)

https://doi.org/10.7567/SSDM.2008.I-10-6