[I-9-3] Charge Trapping Barrier and the Effect of Surface Treatment in Pentacene Thin Film Transistors

T. Miyadera^1,2、S. D. Wang^1,2、T. Minari^2,3、K. Tsukagoshi^1,2 (1.AIST、2.CREST-JST、3.RIKEN, Japan)

https://doi.org/10.7567/SSDM.2008.I-9-3