[I-9-3] Charge Trapping Barrier and the Effect of Surface Treatment in Pentacene Thin Film Transistors

T. Miyadera^1,2, S. D. Wang^1,2, T. Minari^2,3, K. Tsukagoshi^1,2 (1.AIST, 2.CREST-JST, 3.RIKEN, Japan)

https://doi.org/10.7567/SSDM.2008.I-9-3