[J-1-6] Properties of Al₂O₃/Nb₂O₅ and Ta₂O₅/Nb₂O₅ Stacked and Mixed Films for Gigabit DRAM Capacitor

M. Yamato¹、M. Tanioku²、H. Hara¹、T. Kikkawa¹ (1.Hiroshima Univ.、2.Elpida Memory, Inc., Japan)

https://doi.org/10.7567/SSDM.2008.J-1-6