[J-6-1] Numerical Simulation of the Read Disturb Behavior on the ONO Scaling Margin in SONOS Flash Memory

C. H. Lee^1,2、C. W. Wu¹、S. W. Lin¹、T. H. Yeh¹、S. H. Gu¹、K. F. Chen¹、Y. J. Chen¹、J. Y. Hsieh¹、I. J. Huang¹、N. K. Zous¹、T. T. Han¹、M. S. Chen¹、W. P. Lu¹、K. C. Chen¹、T. Wang^1,2、C. Y. Lu¹ (1.Macronix International Co., Ltd、2.National Chiao Tung Univ., Taiwan)

https://doi.org/10.7567/SSDM.2008.J-6-1