Improvement of Switching Disturbance in Spin-Transfer Torque MRAM

D. K. Kim; S. C. Oh; W. Kim; K. T. Nam; Y. Kim; J. Jeong; S. Y. Lee; J. E. Lee; I. S. Yeo; U. I. Chung; J. T. Moon

doi:https://doi.org/10.7567/SSDM.2008.J-8-4

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[J-8-4] Improvement of Switching Disturbance in Spin-Transfer Torque MRAM

D. K. Kim¹, S. C. Oh¹, W. Kim¹, K. T. Nam¹, Y. Kim¹, J. Jeong¹, S. Y. Lee¹, J. E. Lee¹, I. S. Yeo¹, U. I. Chung¹, J. T. Moon¹ (1.Samsung Electronics Co., Ltd., Korea)

https://doi.org/10.7567/SSDM.2008.J-8-4

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