Improvement of Switching Disturbance in Spin-Transfer Torque MRAM

D. K. Kim; S. C. Oh; W. Kim; K. T. Nam; Y. Kim; J. Jeong; S. Y. Lee; J. E. Lee; I. S. Yeo; U. I. Chung; J. T. Moon

doi:https://doi.org/10.7567/SSDM.2008.J-8-4

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[J-8-4] Improvement of Switching Disturbance in Spin-Transfer Torque MRAM

D. K. Kim¹、S. C. Oh¹、W. Kim¹、K. T. Nam¹、Y. Kim¹、J. Jeong¹、S. Y. Lee¹、J. E. Lee¹、I. S. Yeo¹、U. I. Chung¹、J. T. Moon¹ (1.Samsung Electronics Co., Ltd., Korea)

https://doi.org/10.7567/SSDM.2008.J-8-4

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