[J-9-6] The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO2/Pt Memory Device
B. Sun1, L. F. Liu1, N. Xu1, B. Gao1, Y. Wang1, D. D. Han1, X. Y. Liu1, R. Q. Han1, J. F. Kang1
(1.Peking Univ., China)
https://doi.org/10.7567/SSDM.2008.J-9-6