The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO<sub>2</sub>/Pt Memory Device

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

B. Sun¹、L. F. Liu¹、N. Xu¹、B. Gao¹、Y. Wang¹、D. D. Han¹、X. Y. Liu¹、R. Q. Han¹、J. F. Kang¹ (1.Peking Univ., China)