[P-1-1] Atomic-Scale Simulation of Si Etching by Energetic Br⁺ and Br₂⁺ Ions for the Analysis of Gate- or STI- Etching Processes

T. Nagaoka¹、H. Ohta¹、K. Eriguchi¹、K. Ono¹ (1.Kyoto Univ., Japan)

https://doi.org/10.7567/SSDM.2008.P-1-1