Implantation through HfO<sub>2</sub>: Calibration of Simulation and Study on Hf Behavior during Implant

J. Bhandari; P. Rivallin; M. Vinet; T. Poiroux; J. P. Barnes; B. Previtali; S. Deleonibus; A. M. Ionescu

doi:https://doi.org/10.7567/SSDM.2008.P-1-10

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-1-10] Implantation through HfO₂: Calibration of Simulation and Study on Hf Behavior during Implant

J. Bhandari^1,2、P. Rivallin¹、M. Vinet¹、T. Poiroux¹、J. P. Barnes¹、B. Previtali¹、S. Deleonibus¹、A. M. Ionescu² (1.CEA-LETI/MINATEC, France、2.Ecole Polytechnique Fédérale de Lausanne, Switzerland)

https://doi.org/10.7567/SSDM.2008.P-1-10

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2008 International Conference on Solid State Devices and Materials

[P-1-10] Implantation through HfO2: Calibration of Simulation and Study on Hf Behavior during Implant

[P-1-10] Implantation through HfO₂: Calibration of Simulation and Study on Hf Behavior during Implant