Improving Hf-based High-k/Metal Gate n-MOSFET Performances with Gadolinium Cap Layer

C. W. Hsu; Y. K. Fang; W. K. Yeh; J. Y. Chen; C. T. Lin; C. H. Hsu; L. W. Cheng; C. M. Lai

doi:https://doi.org/10.7567/SSDM.2008.P-1-5

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-1-5] Improving Hf-based High-k/Metal Gate n-MOSFET Performances with Gadolinium Cap Layer

C. W. Hsu¹, Y. K. Fang¹, W. K. Yeh², J. Y. Chen², C. T. Lin³, C. H. Hsu³, L. W. Cheng³, C. M. Lai³ (1.National Cheng Kung Univ., 2.National Univ. of Kaohsiung, 3.UMC, Taiwan)

https://doi.org/10.7567/SSDM.2008.P-1-5

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