Improving Hf-based High-k/Metal Gate n-MOSFET Performances with Gadolinium Cap Layer

C. W. Hsu; Y. K. Fang; W. K. Yeh; J. Y. Chen; C. T. Lin; C. H. Hsu; L. W. Cheng; C. M. Lai

doi:https://doi.org/10.7567/SSDM.2008.P-1-5

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-1-5] Improving Hf-based High-k/Metal Gate n-MOSFET Performances with Gadolinium Cap Layer

C. W. Hsu¹、Y. K. Fang¹、W. K. Yeh²、J. Y. Chen²、C. T. Lin³、C. H. Hsu³、L. W. Cheng³、C. M. Lai³ (1.National Cheng Kung Univ.、2.National Univ. of Kaohsiung、3.UMC, Taiwan)

https://doi.org/10.7567/SSDM.2008.P-1-5

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