Interfacial and Electrical Characterization of ALD HfSiON Gated MOSFETs with Different Compositions after Channel Hot-Carrier Stress

H. W. Chen; S. Y. Chen; C. C. Lu; C. H. Liu; F. C. Chiu; H. S. Huang; L. W. Cheng; C. T. Lin; G. H. Ma; S. W. Sun

doi:https://doi.org/10.7567/SSDM.2008.P-1-6

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-1-6] Interfacial and Electrical Characterization of ALD HfSiON Gated MOSFETs with Different Compositions after Channel Hot-Carrier Stress

H. W. Chen¹、S. Y. Chen¹、C. C. Lu¹、C. H. Liu²、F. C. Chiu²、H. S. Huang¹、L. W. Cheng³、C. T. Lin³、G. H. Ma³、S. W. Sun³ (1.National Taipei Univ. of Tech.、2.Ming Chuan Univ.、3.UMC, Taiwan)

https://doi.org/10.7567/SSDM.2008.P-1-6

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