The Japan Society of Applied Physics

[P-1-9] Drain Bias Dependent Model of Si-H Bond Dissociation for NBTI Characteristics of pMOSFETs

J. Yang1, L. Huang1, J. Pan1, X. Liu1, R. Han1, J. Kang1, Z. H. Gan2, M. Liao2, C. C. Liao2, H. M. Wu2 (1.Peking Univ., 2.Semiconductor Manufacturing International Corp., China)

https://doi.org/10.7567/SSDM.2008.P-1-9