Drain Bias Dependent Model of Si-H Bond Dissociation for NBTI Characteristics of pMOSFETs

J. Yang; L. Huang; J. Pan; X. Liu; R. Han; J. Kang; Z. H. Gan; M. Liao; C. C. Liao; H. M. Wu

doi:https://doi.org/10.7567/SSDM.2008.P-1-9

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-1-9] Drain Bias Dependent Model of Si-H Bond Dissociation for NBTI Characteristics of pMOSFETs

J. Yang¹, L. Huang¹, J. Pan¹, X. Liu¹, R. Han¹, J. Kang¹, Z. H. Gan², M. Liao², C. C. Liao², H. M. Wu² (1.Peking Univ., 2.Semiconductor Manufacturing International Corp., China)

https://doi.org/10.7567/SSDM.2008.P-1-9

▲