Drain Bias Dependent Model of Si-H Bond Dissociation for NBTI Characteristics of pMOSFETs

J. Yang; L. Huang; J. Pan; X. Liu; R. Han; J. Kang; Z. H. Gan; M. Liao; C. C. Liao; H. M. Wu

doi:https://doi.org/10.7567/SSDM.2008.P-1-9

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-1-9] Drain Bias Dependent Model of Si-H Bond Dissociation for NBTI Characteristics of pMOSFETs

J. Yang¹、L. Huang¹、J. Pan¹、X. Liu¹、R. Han¹、J. Kang¹、Z. H. Gan²、M. Liao²、C. C. Liao²、H. M. Wu² (1.Peking Univ.、2.Semiconductor Manufacturing International Corp., China)

https://doi.org/10.7567/SSDM.2008.P-1-9

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