Effect of Surface Energy of Gate Insulators on Polymer Field-Effect Transistor Performance

K. Tomatsu; A. Kanehara; H. Uda; T. Hamada; T. Nagase; T. Kobayashi; S. Murakami; M. Watanabe; K. Matsukawa; H. Naito

doi:https://doi.org/10.7567/SSDM.2008.P-10-8

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-10-8] Effect of Surface Energy of Gate Insulators on Polymer Field-Effect Transistor Performance

K. Tomatsu¹, A. Kanehara¹, H. Uda¹, T. Hamada¹, T. Nagase¹, T. Kobayashi¹, S. Murakami², M. Watanabe³, K. Matsukawa³, H. Naito¹ (1.Osaka Prefecture Univ., 2.Tech. Res. Inst. of Osaka Prefecture, 3.Osaka Municipal Technical Res. Inst., Japan)

https://doi.org/10.7567/SSDM.2008.P-10-8

▲