[P-2-1] Stress Depth Profiling of Silicon from Nickel / Silicon Interface before and after Silicide Formation using Polychromator-based Multi-wavelength Raman Spectroscopy

W. S. Yoo¹、T. Ueda¹、K. Kang¹ (1.WaferMasters, Inc., USA)

https://doi.org/10.7567/SSDM.2008.P-2-1