[P-2-1] Stress Depth Profiling of Silicon from Nickel / Silicon Interface before and after Silicide Formation using Polychromator-based Multi-wavelength Raman Spectroscopy
W. S. Yoo1, T. Ueda1, K. Kang1
(1.WaferMasters, Inc., USA)
https://doi.org/10.7567/SSDM.2008.P-2-1
