Demonstration of High Mobility Holes in a Strained Ge Channel Grown on a Novel Thin and Relaxed SiGe/LT-SiGe/Si(001) Virtual Substrate

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

M. Myronov¹、D. R. Leadley¹、Y. Shiraki² (1.Univ. of Warwick, UK、2.Musashi Inst. of Tech., Japan)