[P-3-11] Demonstration of High Mobility Holes in a Strained Ge Channel Grown on a Novel Thin and Relaxed SiGe/LT-SiGe/Si(001) Virtual Substrate

M. Myronov¹, D. R. Leadley¹, Y. Shiraki² (1.Univ. of Warwick, UK, 2.Musashi Inst. of Tech., Japan)

https://doi.org/10.7567/SSDM.2008.P-3-11