Minority Carrier Response Characteristics in Germanium MOS Capacitor

C. C. Cheng; C. H. Chien; G. L. Luo; H. C. Chiang; H. S. Chen; C. L. Lin; C. C. Kei; C. N. Hsiao; C. Y. Chang

doi:https://doi.org/10.7567/SSDM.2008.P-3-4

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-3-4] Minority Carrier Response Characteristics in Germanium MOS Capacitor

C. C. Cheng¹, C. H. Chien^1,2, G. L. Luo², H. C. Chiang¹, H. S. Chen¹, C. L. Lin¹, C. C. Kei³, C. N. Hsiao³, C. Y. Chang¹ (1.National Chiao Tung Univ., 2.National Nano Device Labs., 3.National Applied Res. Labs., Taiwan)

https://doi.org/10.7567/SSDM.2008.P-3-4

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