Minority Carrier Response Characteristics in Germanium MOS Capacitor

C. C. Cheng; C. H. Chien; G. L. Luo; H. C. Chiang; H. S. Chen; C. L. Lin; C. C. Kei; C. N. Hsiao; C. Y. Chang

doi:https://doi.org/10.7567/SSDM.2008.P-3-4

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-3-4] Minority Carrier Response Characteristics in Germanium MOS Capacitor

C. C. Cheng¹、C. H. Chien^1,2、G. L. Luo²、H. C. Chiang¹、H. S. Chen¹、C. L. Lin¹、C. C. Kei³、C. N. Hsiao³、C. Y. Chang¹ (1.National Chiao Tung Univ.、2.National Nano Device Labs.、3.National Applied Res. Labs., Taiwan)

https://doi.org/10.7567/SSDM.2008.P-3-4

▲