[P-3-5] Improved Analytic I-V Model of the Long-Channel Undoped Surrounding-Gate MOSFET

A. Son¹、J. Kim¹、N. Jeong¹、J. Choi²、H. Shin¹ (1.Ewha Womans Univ.、2.Hynix Semiconductor Inc., Korea)

https://doi.org/10.7567/SSDM.2008.P-3-5