RF Small-Signal and Noise Modeling for SOI Dynamic Threshold Voltage MOSFETs

S. C. Wang; P. Su; K. M. Chen; S. Y. Huang; C. C. Hung; V. Liang; C. Y. Tzeng; G. W. Huang

doi:https://doi.org/10.7567/SSDM.2008.P-3-6

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-3-6] RF Small-Signal and Noise Modeling for SOI Dynamic Threshold Voltage MOSFETs

S. C. Wang^1,2、P. Su¹、K. M. Chen²、S. Y. Huang³、C. C. Hung³、V. Liang³、C. Y. Tzeng³、G. W. Huang² (1.National Chiao Tung Univ.、2.National Nano Device Labs.、3.UMC, Taiwan)

https://doi.org/10.7567/SSDM.2008.P-3-6

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