RF Small-Signal and Noise Modeling for SOI Dynamic Threshold Voltage MOSFETs

S. C. Wang; P. Su; K. M. Chen; S. Y. Huang; C. C. Hung; V. Liang; C. Y. Tzeng; G. W. Huang

doi:https://doi.org/10.7567/SSDM.2008.P-3-6

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-3-6] RF Small-Signal and Noise Modeling for SOI Dynamic Threshold Voltage MOSFETs

S. C. Wang^1,2, P. Su¹, K. M. Chen², S. Y. Huang³, C. C. Hung³, V. Liang³, C. Y. Tzeng³, G. W. Huang² (1.National Chiao Tung Univ., 2.National Nano Device Labs., 3.UMC, Taiwan)

https://doi.org/10.7567/SSDM.2008.P-3-6

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