[P-3-7] Origin of Enhanced Impact Ionization in Strained-SiGe pMOSFETs

P. C. Huang¹、T. K. Kang²、Y. H. Sa²、S. L. Wu²、S. J. Chang¹ (1.National Cheng Kung Univ.、2.Cheng Shiu Univ., Taiwan)

https://doi.org/10.7567/SSDM.2008.P-3-7