[P-3-7] Origin of Enhanced Impact Ionization in Strained-SiGe pMOSFETs

P. C. Huang¹, T. K. Kang², Y. H. Sa², S. L. Wu², S. J. Chang¹ (1.National Cheng Kung Univ., 2.Cheng Shiu Univ., Taiwan)

https://doi.org/10.7567/SSDM.2008.P-3-7