[P-5-12L] ESD Robustness Improvement for VDMOS Transistors to Harsh Applications

K. Hatasako¹、F. Yamamoto¹、A. Uenishi¹、T. Kuroi¹、S. Maegawa¹ (1.Renesas Tech. Corp., Japan)

https://doi.org/10.7567/SSDM.2008.P-5-12L