[P-5-12L] ESD Robustness Improvement for VDMOS Transistors to Harsh Applications

K. Hatasako¹, F. Yamamoto¹, A. Uenishi¹, T. Kuroi¹, S. Maegawa¹ (1.Renesas Tech. Corp., Japan)

https://doi.org/10.7567/SSDM.2008.P-5-12L