[P-6-1] High Mobility Transparent SnO₂ and ZnO-SnO₂ Thin-film Transistors with Double-layed Gate Insulators

W. S. Cheong¹, S. M. Yoon¹, C. S. Hwang¹, H. Y. Chu¹ (1.ETRI, Korea)

https://doi.org/10.7567/SSDM.2008.P-6-1