[P-6-1] High Mobility Transparent SnO2 and ZnO-SnO2 Thin-film Transistors with Double-layed Gate Insulators W. S. Cheong1、S. M. Yoon1、C. S. Hwang1、H. Y. Chu1 (1.ETRI, Korea) https://doi.org/10.7567/SSDM.2008.P-6-1