Below-Gap Levels in InGaAs High-Electron-Mobility Transistors Observed by Two-Wavelength Excited Photoluminescence

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

T. Yamaguchi¹, A. Okamato¹, T. Fukuda¹, T. Takada², T. Itatani³, N. Kamata¹ (1.Saitama Univ., 2.Sumitomo Chemical Co., Ltd., 3.AIST, Japan)