Below-Gap Levels in InGaAs High-Electron-Mobility Transistors Observed by Two-Wavelength Excited Photoluminescence

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

T. Yamaguchi¹、A. Okamato¹、T. Fukuda¹、T. Takada²、T. Itatani³、N. Kamata¹ (1.Saitama Univ.、2.Sumitomo Chemical Co., Ltd.、3.AIST, Japan)