[P-6-12] Device Structure- and Trap Parameter-Dependence of Current Collapse and Lag Phenomena in AlGaN/GaN HEMTs

A. Nakajima¹, K. Itagaki¹, H. Nara¹, K. Horio¹ (1.Shibaura Inst. of Tech., Japan)

https://doi.org/10.7567/SSDM.2008.P-6-12