[P-6-6] Theoretical Investigation of GaN-Based Diodes with a Recessed composite Schottky-barrier Structure

H. Makino¹、N. Ishikawa¹、K. Shiojima¹、M. Kuzuhara¹ (1.Univ. of Fukui, Japan)

https://doi.org/10.7567/SSDM.2008.P-6-6