Improved 70 nm In<sub>0.52</sub>AlAs/In<sub>0.65</sub>GaAs High Electron Mobility Transistor with Additional Ohmic Contacts

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

S. J. Yeon¹, J. Kim¹, S. Lee¹, M. Park¹, K. Seo¹ (1.Seoul National Univ., Korea)