[P-6-7] Improved 70 nm In_0.52AlAs/In_0.65GaAs High Electron Mobility Transistor with Additional Ohmic Contacts

S. J. Yeon¹、J. Kim¹、S. Lee¹、M. Park¹、K. Seo¹ (1.Seoul National Univ., Korea)

https://doi.org/10.7567/SSDM.2008.P-6-7