A Fast Sapphire Substrate Surface Roughening Technology using CO<sub>2</sub> Laser for Enhancing Light Extraction of GaN-Based Flip-Chip Light-Emitting Diodes

P. R. Wang; S. J. Wang; K. M. Uang; T. M. Chen; F. T. Tang; H. Y. Kuo; H. Kuan

doi:https://doi.org/10.7567/SSDM.2008.P-7-10

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-7-10] A Fast Sapphire Substrate Surface Roughening Technology using CO₂ Laser for Enhancing Light Extraction of GaN-Based Flip-Chip Light-Emitting Diodes

P. R. Wang¹、S. J. Wang¹、K. M. Uang²、T. M. Chen²、F. T. Tang¹、H. Y. Kuo¹、H. Kuan³ (1.National Cheng Kung Univ.、2.Wu Feng Inst. of Tech.、3.Southern Taiwan Univ. of Tech., Taiwan)

https://doi.org/10.7567/SSDM.2008.P-7-10

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2008 International Conference on Solid State Devices and Materials

[P-7-10] A Fast Sapphire Substrate Surface Roughening Technology using CO2 Laser for Enhancing Light Extraction of GaN-Based Flip-Chip Light-Emitting Diodes

[P-7-10] A Fast Sapphire Substrate Surface Roughening Technology using CO₂ Laser for Enhancing Light Extraction of GaN-Based Flip-Chip Light-Emitting Diodes