Impact of Channel Doping Concentration on Random Telegraph Signal Noise

K. Abe; A. Teramoto; S. Watabe; T. Fujisawa; S. Sugawa; Y. Kamata; K. Shibusawa; T. Ohmi

doi:https://doi.org/10.7567/SSDM.2009.A-2-5

2009 International Conference on Solid State Devices and Materials

Oct 6, 2009 - Oct 9, 2009
Sendai Kokusai Hotel, Miyagi, Japan

[A-2-5] Impact of Channel Doping Concentration on Random Telegraph Signal Noise

K. Abe¹, A. Teramoto¹, S. Watabe¹, T. Fujisawa¹, S. Sugawa¹, Y. Kamata², K. Shibusawa², T. Ohmi¹ (1.Tohoku Univ.(Japan), 2.OKI Semiconductor Miyagi Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2009.A-2-5

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