Impact of Channel Doping Concentration on Random Telegraph Signal Noise

K. Abe; A. Teramoto; S. Watabe; T. Fujisawa; S. Sugawa; Y. Kamata; K. Shibusawa; T. Ohmi

doi:https://doi.org/10.7567/SSDM.2009.A-2-5

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜 2009年10月9日
Sendai Kokusai Hotel, Miyagi, Japan

[A-2-5] Impact of Channel Doping Concentration on Random Telegraph Signal Noise

K. Abe¹、A. Teramoto¹、S. Watabe¹、T. Fujisawa¹、S. Sugawa¹、Y. Kamata²、K. Shibusawa²、T. Ohmi¹ (1.Tohoku Univ.(Japan)、2.OKI Semiconductor Miyagi Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2009.A-2-5

▲