[A-3-1] Carbon Incorporation into Substitutional Silicon Site by Molecular Carbon Ion Implantation and Recrystallization Annealing for Stress Technique in nMOSFETs

H. Itokawa¹、K. Miyano¹、Y. Oshima¹、I. Mizushima¹、K. Suguro¹ (1.Toshiba Corp.)

https://doi.org/10.7567/SSDM.2009.A-3-1