The Japan Society of Applied Physics

[A-3-2] Influence of Carbon in in-situ Carbon Doped SiGe (SiGe:C) Films on Si (001) Substrates on Epitaxial Growth Characteristics

H. Oomae1, H. Itokawa2, I. Mizushima2, S. Nakamura3, N. Uchitomi1 (1.Nagaoka Univ. of Tech.(Japan), 2.Toshiba Corp.(Japan), 3.Aoyama Gakuin Univ.(Japan))

https://doi.org/10.7567/SSDM.2009.A-3-2