Influence of Carbon in in-situ Carbon Doped SiGe (SiGe:C) Films on Si (001) Substrates on Epitaxial Growth Characteristics

H. Oomae; H. Itokawa; I. Mizushima; S. Nakamura; N. Uchitomi

doi:https://doi.org/10.7567/SSDM.2009.A-3-2

[A-3-2] Influence of Carbon in in-situ Carbon Doped SiGe (SiGe:C) Films on Si (001) Substrates on Epitaxial Growth Characteristics

H. Oomae¹, H. Itokawa², I. Mizushima², S. Nakamura³, N. Uchitomi¹ (1.Nagaoka Univ. of Tech.(Japan), 2.Toshiba Corp.(Japan), 3.Aoyama Gakuin Univ.(Japan))

https://doi.org/10.7567/SSDM.2009.A-3-2

2009 International Conference on Solid State Devices and Materials

[A-3-2] Influence of Carbon in in-situ Carbon Doped SiGe (SiGe:C) Films on Si (001) Substrates on Epitaxial Growth Characteristics