[A-3-2] Influence of Carbon in in-situ Carbon Doped SiGe (SiGe:C) Films on Si (001) Substrates on Epitaxial Growth Characteristics

H. Oomae¹、H. Itokawa²、I. Mizushima²、S. Nakamura³、N. Uchitomi¹ (1.Nagaoka Univ. of Tech.(Japan)、2.Toshiba Corp.(Japan)、3.Aoyama Gakuin Univ.(Japan))

https://doi.org/10.7567/SSDM.2009.A-3-2