Carbon Profile Engineering for Silicon-Carbon Source/Drain Stressor Formed by Carbon Ion Implantation and Solid Phase Epitaxy

Q. Zhou; S. M. Koh; Z. Y. Zhao; T. Toh; H. Maynard; N. Variam; T. Henry; Y. Erokhin; Y. C. Yeo

doi:https://doi.org/10.7567/SSDM.2009.A-3-3

[A-3-3] Carbon Profile Engineering for Silicon-Carbon Source/Drain Stressor Formed by Carbon Ion Implantation and Solid Phase Epitaxy

Q. Zhou¹、S. M. Koh¹、Z. Y. Zhao²、T. Toh²、H. Maynard²、N. Variam²、T. Henry²、Y. Erokhin²、Y. C. Yeo¹ (1.National Univ. of Singapore(Singapore)、2.Varian Semiconductor(USA))

https://doi.org/10.7567/SSDM.2009.A-3-3

2009 International Conference on Solid State Devices and Materials

[A-3-3] Carbon Profile Engineering for Silicon-Carbon Source/Drain Stressor Formed by Carbon Ion Implantation and Solid Phase Epitaxy