Carbon Profile Engineering for Silicon-Carbon Source/Drain Stressor Formed by Carbon Ion Implantation and Solid Phase Epitaxy

Q. Zhou; S. M. Koh; Z. Y. Zhao; T. Toh; H. Maynard; N. Variam; T. Henry; Y. Erokhin; Y. C. Yeo

doi:https://doi.org/10.7567/SSDM.2009.A-3-3

[A-3-3] Carbon Profile Engineering for Silicon-Carbon Source/Drain Stressor Formed by Carbon Ion Implantation and Solid Phase Epitaxy

Q. Zhou¹, S. M. Koh¹, Z. Y. Zhao², T. Toh², H. Maynard², N. Variam², T. Henry², Y. Erokhin², Y. C. Yeo¹ (1.National Univ. of Singapore(Singapore), 2.Varian Semiconductor(USA))

https://doi.org/10.7567/SSDM.2009.A-3-3

2009 International Conference on Solid State Devices and Materials

[A-3-3] Carbon Profile Engineering for Silicon-Carbon Source/Drain Stressor Formed by Carbon Ion Implantation and Solid Phase Epitaxy