Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates

T. Mizuno; N. Mizoguchi; K. Tanimoto; T. Yamauchi; T. Tezuka; T. Sameshima

doi:https://doi.org/10.7567/SSDM.2009.A-4-2

[A-4-2] Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates

T. Mizuno^1,2、N. Mizoguchi¹、K. Tanimoto¹、T. Yamauchi¹、T. Tezuka³、T. Sameshima⁴ (1.Kanagawa Univ.(Japan)、2.MIRAI-NIRC(Japan)、3.MIRAI-Toshiba(Japan)、4.Tokyo Univ. of Agri. And Tech.(Japan))

https://doi.org/10.7567/SSDM.2009.A-4-2

2009 International Conference on Solid State Devices and Materials

[A-4-2] Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates