Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates

T. Mizuno; N. Mizoguchi; K. Tanimoto; T. Yamauchi; T. Tezuka; T. Sameshima

doi:https://doi.org/10.7567/SSDM.2009.A-4-2

[A-4-2] Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates

T. Mizuno^1,2, N. Mizoguchi¹, K. Tanimoto¹, T. Yamauchi¹, T. Tezuka³, T. Sameshima⁴ (1.Kanagawa Univ.(Japan), 2.MIRAI-NIRC(Japan), 3.MIRAI-Toshiba(Japan), 4.Tokyo Univ. of Agri. And Tech.(Japan))

https://doi.org/10.7567/SSDM.2009.A-4-2

2009 International Conference on Solid State Devices and Materials

[A-4-2] Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates